Fundamental Journals

  International Journal of Fundamental Physical Sciences (IJFPS) 

    ISSN : 2231-8186

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IJFPS, Vol 4, No 2, June, 2014

NEW

Vol 4, No 2, June, 2014

 

 

Improved stability of 4H SiC-MOS devices after phosphorous passivation with etching process

DOI:10.14331/ijfps.2014.330064

Y.K. Sharma, Yi Xu, M. R. Jennings, C Fisher, P. Mawby, L.C. Feldman, J.R. Williams

 

ABSTRACT

Phosphorous passivation of the interface (4H-SiC/SiO2) improves interface trap density (Dit) from 1013 eV-1cm-2 to 2x1012eV-1cm-2 at 0.2eV  below the conduction band edge of 4H-SiC. Due to the formation of phosphosilicate glass (PSG) layer during P passivation, metal-oxide-semiconductor capacitors (MOS-Cs) are highly unstable. Under bias-temperature stress (BTS) there is very large shift in the flatband voltage, VFB, (independent of the bias polarity) of MOS-Cs. In this paper we proposed a new method to improve the stability of these devices. The PSG layer formed after passivation is etched-off in buffered oxide etch (BOE) and then capped with deposited oxide. Devices fabricated with this process showed Dit of 4x1012eV-1cm-2, and are stable after BTS test performed at 150oC, +1.5MV/cm. This value of Dit is as good as the-state-of-the-art NO/N2O passivated MOS-C. Also, XPS indicated the presence of P at the interface after etching which explains “NO/N2O –like” Dit for etched PSG MOS-Cs.

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Scrutiny on the static behavior of physical parameters for ITER90H-P fusion reactor using deuterium–tritium and deuterium-helium mixtures

 DOI:10.14331/ijfps.2014.330065

S.N.Hosseinimotlagh, S.Kianafraz, H.Arshadi, N.Jamshidi

ABSTRACT

In this work, the performance of fusion reactor ITER90H-P with considering D – T and D-3He fuels are examined by writing the dynamics equations on the system reactor. Therefore, we solve these equations analytically in the steady state. In this state we determine the optimum conditions for achieving the maximum fusion gain .In addition, we ignore the impurities because we need to high performance points without impurities. Our calculations in this paper show that we have maximum fusion gain for DT and D-3He fusion reactions in steady state at resonance temperature Kev70 for D-T fusion reaction respectively .Their maximum values of fusion gain are equal to 6.01 for D-T fuel-andthe0.012 for D-3He, respectively. Therefore, currently, using D-3He  as a fusion fuel not recommended.

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The interlayer exchange Cu as a function of nonmagnetic on giant magnetoresistance multilayers

DOI:10.14331/ijfps.2014.330066

Haji Shirinzadeh

  

ABSTRACT

This paper present a studies of magnetic multilayer structure and a key advantage of Molecular Beam Epitaxy preparation technique, and additional epitaxial over layers to study interlayer exchange coupling and the resulting reduction of growth induced defect are discussed.

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