Dynamic tensor properties of silicon with deep impurity levels

Mathematics-Physics

Abstract

The dynamical tensoproperties of simples Si <Ni>, Si <Gd>, Si <Au> and Si <Mn> at temperatures Т=293К and Т=273К are investigated. The strongly increasing of dynamical tensosensitivity these specified simples at speed of change of pressure P\t >108 Pa/s in comparison with their statistical tensosensitivities is shown.