Zn2SiO4 and SnO2 nanowires synthesized by thermal ramping technique

Nanowires

Authors

  • Zainal Abidin Ali Department of Physics, University of Malaya, 50603 Kuala Lumpur, Malaysia
  • R. Puteh Department of Physics, University of Malaya, 50603 Kuala Lumpur, Malaysia

DOI:

https://doi.org/10.14331/ijfps.2012.330016

Keywords:

Thermal Ramping, Carbothermal Technique, SnO2 Nanowires

Abstract

In this report, nanowires of Zn2SiO4 and SnO2 have been successfully synthesized using a simple novel method namely thermal ramping technique. The technique applies thermal ramping of the sample to a temperature of 900 oC using carbothermal reduction method. This technique requires no carrier gas. Elemental analysis and crystal structure were evaluated using Field Emission Scanning Electron Microscopy (FESEM) , Energy Dispersive X-ray (EDX) and X-ray Diffraction(XRD) analysis. Nanowires of SnO2 and Zn2SiO4 with diameter ranging from 15-25 nm were observed. The effect of Au thickness in synthesizing Zn2SiO4 is also discussed.

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Author Biography

R. Puteh, Department of Physics, University of Malaya, 50603 Kuala Lumpur, Malaysia

 

 

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Published

2011-09-30

Issue

Vol. 1 No. 3 (2011): IJFPS

Section

ORIGINAL ARTICLES

License

Copyright (c) 2011 International Journal of Fundamental Physical Science

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This work is licensed under a Creative Commons Attribution 4.0 International License.

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