Structural and Optical Properties of SiOx/Au/SiOx Layer Films on the Effect of Rapid Thermal Annealing Process

Chemical Vapour Deposition

Authors

  • Najwa Rosli Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603, Kuala Lumpur, Malaysia y
  • Keewah Chan Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603, Kuala Lumpur, Malaysia y
  • Saadah A. Rahman Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603, Kuala Lumpur, Malaysia y
  • Ilyani Putri Jamal Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603, Kuala Lumpur, Malaysia y
  • Zarina Aspanut Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603, Kuala Lumpur, Malaysia y

DOI:

https://doi.org/10.14331/ijfps.2011.330018

Keywords:

Silicon, Plasma Enhanced Chemical Vapour Deposition (PECVD), FE-SEM, XRD

Abstract

In this work, layered of silicon suboxide/gold/silicon suboxide (SiOx/Au/SiOx) films were prepared by using hot-wire plasma enhanced chemical vapor deposition (HW-PECVD) system. The films prepared underwent rapid thermal annealing (RTA) process for time periods of 100s, 500s and 700s at temperature of 800oC in vacuum. The effects of RTA on the structural and morphology from FE-SEM, Auger and XRD measurement of the films were studied. The surface plasmon resonance (SPR) effect exhibited by Au particles was obtained from the optical absorption spectra. SPR peaks were exhibited by films which annealed for long time duration. The band gap energy of the annealed samples was found to be in the range of 1.8 to 2.05 eV.

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Author Biography

Zarina Aspanut, Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603, Kuala Lumpur, Malaysia y

 

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Published

2011-12-31

Issue

Vol. 1 No. 4 (2011): IJFPS

Section

ORIGINAL ARTICLES

License

Copyright (c) 2011 International Journal of Fundamental Physical Science

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This work is licensed under a Creative Commons Attribution 4.0 International License.

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