@article{Abidin Ali_Puteh_2011, title={Zn2SiO4 and SnO2 nanowires synthesized by thermal ramping technique: Nanowires}, volume={1}, url={https://fundamentaljournals.org/index.php/ijfps/article/view/93}, DOI={10.14331/ijfps.2012.330016}, abstractNote={<p>In this report, nanowires of Zn2SiO4 and SnO2 have been successfully synthesized using a simple novel method namely thermal ramping technique. The technique applies thermal ramping of the sample to a temperature of 900 oC using carbothermal reduction method. This technique requires no carrier gas. Elemental analysis and crystal structure were evaluated using Field Emission Scanning Electron Microscopy (FESEM) , Energy Dispersive X-ray (EDX) and X-ray Diffraction(XRD) analysis. Nanowires of SnO2 and Zn2SiO4 with diameter ranging from 15-25 nm were observed. The effect of Au thickness in synthesizing Zn2SiO4 is also discussed.</p>}, number={3}, journal={International Journal of Fundamental Physical Sciences}, author={Abidin Ali, Zainal and Puteh, R.}, year={2011}, month={Sep.}, pages={64-67} }